| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number | MXSMLJ26AE3 | MXSMBG11A |
| Manufacturer | Microsemi Corporation | Microsemi Corporation |
| Description | TVS DIODE 26VWM 42.1VC DO214AB | TVS DIODE 11VWM 18.2VC DO215AA |
| Quantity Available | Available | Available |
| Factory Lead Time | 18 Weeks | 18 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) | IN PRODUCTION (Last Updated: 1 month ago) |
| Mount | Surface Mount | Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | DO-214AB, SMC | DO-215AA, SMB Gull Wing |
| Number of Pins | 2 | 2 |
| Diode Element Material | SILICON | SILICON |
| Operating Temperature | -65°C~150°C TJ | -65°C~150°C TJ |
| Packaging | Bulk | Bulk |
| Published | 1997 | 1997 |
| Series | Military, MIL-PRF-19500 | Military, MIL-PRF-19500 |
| JESD-609 Code | e3 | e0 |
| Pbfree Code | yes | no |
| Part Status | Active | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 2 | 2 |
| ECCN Code | EAR99 | EAR99 |
| Terminal Finish | Matte Tin (Sn) | Tin/Lead (Sn/Pb) |
| Applications | General Purpose | General Purpose |
| Technology | AVALANCHE | AVALANCHE |
| Terminal Position | DUAL | DUAL |
| Terminal Form | J BEND | - |
| Peak Reflow Temperature (Cel) | 260 | - |
| Time@Peak Reflow Temperature-Max (s) | 40 | - |
| Pin Count | 2 | 2 |
| Number of Elements | 1 | 1 |
| Element Configuration | Single | Single |
| Power Line Protection | No | No |
| Voltage - Breakdown (Min) | 28.9V | 12.2V |
| Power - Peak Pulse | 3000W 3kW | 600W |
| Max Reverse Leakage Current | 2μA | 5μA |
| Clamping Voltage | 42.1V | 18.2V |
| Peak Pulse Current | 71.2A | 33A |
| Reverse Standoff Voltage | 26V | 11V |
| Peak Pulse Power | 3kW | 600W |
| Direction | Unidirectional | Unidirectional |
| Test Current | 1mA | 1mA |
| Unidirectional Channels | 1 | 1 |
| Non-rep Peak Rev Power Dis-Max | 3000W | - |
| RoHS Status | Non-RoHS Compliant | Non-RoHS Compliant |
| Additional Feature | - | HIGH RELIABILITY |
| Subcategory | - | Transient Suppressors |
| Breakdown Voltage | - | 12.85V |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
|
MXSMBG160AE3 | Microsemi Corporation | TVS DIODE 160VWM 259VC DO215AA | Compare |
|
MXSMBG12A | Microsemi Corporation | TVS DIODE 12VWM 19.9VC DO215AA | Compare |
|
MXSMBG16A | Microsemi Corporation | TVS DIODE 16VWM 26VC DO215AA | Compare |
|
MXSMBG13A | Microsemi Corporation | TVS DIODE 13VWM 21.5VC DO215AA | Compare |
|
MXSMBG170A | Microsemi Corporation | TVS DIODE 170VWM 275VC DO215AA | Compare |
|
MXSMBG12AE3 | Microsemi Corporation | TVS DIODE 12VWM 19.9VC DO215AA | Compare |
