Rds(on) at VGS=4.5 V (max) (mΩ)
23.9
Rds(on) at VGS=2.5 V (max) (mΩ)
32.5
Rds(on) at VGS=1.8 V (max) (mΩ)
89
ID - silicon limited at TC=25°C (A)
9.6
Operating temperature range (°C)
-55 to 150
This 19.9 mΩ, –20 V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2 mm × 2 mm plastic package make the device ideal for battery operated space constrained operations.
For all available packages, see the orderable addendum at the end of the data sheet.
CSD25310Q2 More Descriptions
-20-V, P channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 23.9 mOhm 6-WSON -55 to 150
MOSFET, P-CH, -20V, -20A, WSON-6; Polarité transistor: Canal P; Courant de drain Id: -20A; Tension Vds max..: -20V; Résistance Rds(on): 0.0199ohm; Tension, mesure Rds: -4.5V; Tension de seuil Vgs: -850mV; Dissipation de puissa
Mosfet, P-Ch, -20V, -20A, Wson-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-20V; On Resistance Rds(On):0.0199Ohm; Rds(On) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-850Mv; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD25310Q2
