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Part Number: CPH3109-TL-E vs CPH6347-TL-W

Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! ON Semiconductor ON Semiconductor
Part Number CPH3109-TL-E CPH6347-TL-W
Manufacturer ON Semiconductor ON Semiconductor
Description TRANS PNP 30V 3A CPH3 MOSFET P-CH 20V 6A CPH6
Quantity Available Available Available
Lifecycle Status ACTIVE (Last Updated: 2 days ago) ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 2 Weeks 10 Weeks
Contact Plating Tin Tin
Mounting Type Surface Mount Surface Mount
Package / Case SC-96 SOT-23-6 Thin, TSOT-23-6
Number of Pins 3 -
Operating Temperature 150°C TJ 150°C TJ
Packaging Tape & Reel (TR) Tape & Reel (TR)
Published 2013 2012
JESD-609 Code e6 e6
Pbfree Code yes yes
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
ECCN Code EAR99 -
Max Power Dissipation 900mW -
Reach Compliance Code not_compliant not_compliant
Frequency 380MHz -
Pin Count 3 -
Number of Elements 1 1
Element Configuration Single -
Power Dissipation 900mW -
Gain Bandwidth Product 380MHz -
Transistor Type PNP -
Collector Emitter Voltage (VCEO) 30V -
Max Collector Current 3A -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V -
Current - Collector Cutoff (Max) 100nA ICBO -
Vce Saturation (Max) @ Ib, Ic 230mV @ 30mA, 1.5A -
Collector Emitter Breakdown Voltage 30V -
Collector Emitter Saturation Voltage -155mV -
Collector Base Voltage (VCBO) 30V -
Emitter Base Voltage (VEBO) 5V -
hFE Min 200 -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Lead Free Lead Free Lead Free
Mount - Surface Mount
Transistor Element Material - SILICON
Number of Terminations - 6
Additional Feature - ESD PROTECTED
Technology - MOSFET (Metal Oxide)
Terminal Position - DUAL
Terminal Form - GULL WING
JESD-30 Code - R-PDSO-G6
Configuration - SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max - 1.6W Ta
Operating Mode - ENHANCEMENT MODE
Turn On Delay Time - 10 ns
FET Type - P-Channel
Rds On (Max) @ Id, Vgs - 39m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id - 1.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds - 860pF @ 10V
Current - Continuous Drain (Id) @ 25°C - 6A Ta
Gate Charge (Qg) (Max) @ Vgs - 10.5nC @ 4.5V
Rise Time - 48ns
Drain to Source Voltage (Vdss) - 20V
Drive Voltage (Max Rds On,Min Rds On) - 1.8V 4.5V
Vgs (Max) - ±12V
Fall Time (Typ) - 78 ns
Turn-Off Delay Time - 100 ns
Continuous Drain Current (ID) - 6A
Gate to Source Voltage (Vgs) - 12V
Drain Current-Max (Abs) (ID) - 6A
Drain-source On Resistance-Max - 0.039Ohm
Pulsed Drain Current-Max (IDM) - 24A
DS Breakdown Voltage-Min - 20V
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