| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number | IXTQ36N30P | IXTA1N170DHV |
| Manufacturer | IXYS | IXYS |
| Description | MOSFET N-CH 300V 36A TO-3P | MOSFET N-CH 1700V 1A TO-263 |
| Quantity Available | Available | Available |
| Factory Lead Time | 24 Weeks | 19 Weeks |
| Mount | Through Hole | Surface Mount |
| Mounting Type | Through Hole | Surface Mount |
| Package / Case | TO-3P-3, SC-65-3 | TO-263-3, D2Pak (2 Leads Tab), TO-263AB |
| Number of Pins | 3 | - |
| Transistor Element Material | SILICON | - |
| Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
| Packaging | Tube | Tube |
| Series | PolarHT™ | - |
| Published | 2006 | 2014 |
| JESD-609 Code | e3 | e3 |
| Pbfree Code | yes | - |
| Part Status | Active | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 3 | - |
| ECCN Code | EAR99 | - |
| Terminal Finish | Matte Tin (Sn) | Matte Tin (Sn) |
| Additional Feature | AVALANCHE RATED | - |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | - |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | - |
| Pin Count | 3 | - |
| Qualification Status | Not Qualified | - |
| Number of Elements | 1 | - |
| Power Dissipation-Max | 300W Tc | 290W Tc |
| Element Configuration | Single | - |
| Operating Mode | ENHANCEMENT MODE | - |
| Power Dissipation | 300W | - |
| Case Connection | DRAIN | - |
| FET Type | N-Channel | N-Channel |
| Transistor Application | SWITCHING | - |
| Rds On (Max) @ Id, Vgs | 110m Ω @ 18A, 10V | 16 Ω @ 500mA, 0V |
| Vgs(th) (Max) @ Id | 5.5V @ 250μA | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 25V | 3090pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 36A Tc | 1A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V | 47nC @ 5V |
| Rise Time | 30ns | - |
| Drive Voltage (Max Rds On,Min Rds On) | 10V | 10V |
| Vgs (Max) | ±30V | ±20V |
| Fall Time (Typ) | 28 ns | - |
| Turn-Off Delay Time | 97 ns | - |
| Continuous Drain Current (ID) | 36A | 1A |
| Gate to Source Voltage (Vgs) | 30V | - |
| Drain-source On Resistance-Max | 0.11Ohm | - |
| Drain to Source Breakdown Voltage | 300V | - |
| Pulsed Drain Current-Max (IDM) | 90A | - |
| Avalanche Energy Rating (Eas) | 1000 mJ | - |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Lead Free | Lead Free | - |
| Reach Compliance Code | - | not_compliant |
| Drain to Source Voltage (Vdss) | - | 1700V |
| FET Feature | - | Depletion Mode |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
|
IXTA1N100 | IXYS | MOSFET N-CH 1000V 1.5A TO-263 | Compare |
|
IXTA1N100P | IXYS | MOSFET N-CH 1000V 1A TO-263 | Compare |
|
IXTA1N200P3HV | IXYS | MOSFET N-CH 2000V 1A TO-263HV | Compare |
|
IXTA1N120P | IXYS | MOSFET N-CH 1200V 1A TO-263 | Compare |
