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Part Number: IRLSL3034PBF vs IRL2203NLPBF

Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! Infineon Technologies Infineon Technologies
Part Number IRLSL3034PBF IRL2203NLPBF
Manufacturer Infineon Technologies Infineon Technologies
Description MOSFET N-CH 40V 195A TO262 MOSFET N-CH 30V 116A TO-262
Quantity Available Available Available
Mount Through Hole Through Hole
Mounting Type Through Hole Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3 3
Supplier Device Package TO-262 TO-262
Operating Temperature -55°C~175°C TJ -55°C~175°C TJ
Packaging Tube Tube
Series HEXFET® HEXFET®
Published 2009 2010
Part Status Obsolete Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Max Operating Temperature 175°C 175°C
Min Operating Temperature -55°C -55°C
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Number of Elements 1 1
Power Dissipation-Max 375W Tc 3.8W Ta 180W Tc
Element Configuration Single -
Power Dissipation 375W 170W
Turn On Delay Time 65 ns 11 ns
FET Type N-Channel N-Channel
Rds On (Max) @ Id, Vgs 1.7mOhm @ 195A, 10V 7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10315pF @ 25V 3290pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc 116A Tc
Gate Charge (Qg) (Max) @ Vgs 162nC @ 4.5V 60nC @ 4.5V
Rise Time 827ns 160ns
Drain to Source Voltage (Vdss) 40V 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V 4.5V 10V
Vgs (Max) ±20V ±16V
Fall Time (Typ) 355 ns 66 ns
Turn-Off Delay Time 97 ns 23 ns
Continuous Drain Current (ID) 195A 116A
Gate to Source Voltage (Vgs) 20V 16V
Drain to Source Breakdown Voltage 40V 30V
Input Capacitance 10.315nF 3.29nF
Drain to Source Resistance 1.7mOhm 10mOhm
Rds On Max 1.7 mΩ 7 mΩ
Height 9.65mm -
Length 10.668mm -
Width 4.826mm -
Radiation Hardening No No
RoHS Status RoHS Compliant RoHS Compliant
Voltage - Rated DC - 30V
Current Rating - 116A
Lead Free - Lead Free
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