| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number | IRGB4061DPBF | IRG4BC40W-LPBF |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Description | IGBT 600V 36A 206W TO220AB | IGBT 600V 40A 160W TO262 |
| Quantity Available | Available | Available |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Supplier Device Package | TO-220AB | - |
| Operating Temperature | -55°C~175°C TJ | -55°C~150°C TJ |
| Packaging | Tube | Tube |
| Part Status | Last Time Buy | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | 1 (Unlimited) |
| Input Type | Standard | Standard |
| Power - Max | 206W | - |
| Reverse Recovery Time | 100ns | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V | - |
| Current - Collector (Ic) (Max) | 36A | - |
| Test Condition | 400V, 18A, 22Ohm, 15V | 480V, 20A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 18A | 2.5V @ 15V, 20A |
| IGBT Type | Trench | - |
| Gate Charge | 35nC | 98nC |
| Current - Collector Pulsed (Icm) | 72A | 160A |
| Td (on/off) @ 25°C | 40ns/105ns | 27ns/100ns |
| Switching Energy | 95μJ (on), 350μJ (off) | 110μJ (on), 230μJ (off) |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Factory Lead Time | - | 9 Weeks |
| Mount | - | Through Hole |
| Number of Pins | - | 3 |
| Weight | - | 2.084002g |
| Transistor Element Material | - | SILICON |
| Published | - | 2010 |
| JESD-609 Code | - | e3 |
| Number of Terminations | - | 3 |
| ECCN Code | - | EAR99 |
| Terminal Finish | - | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | - | LOW CONDUCTION LOSS |
| Subcategory | - | Insulated Gate BIP Transistors |
| Voltage - Rated DC | - | 600V |
| Max Power Dissipation | - | 160W |
| Terminal Position | - | SINGLE |
| Peak Reflow Temperature (Cel) | - | 260 |
| Current Rating | - | 40A |
| Time@Peak Reflow Temperature-Max (s) | - | 30 |
| Number of Elements | - | 1 |
| Element Configuration | - | Dual |
| Power Dissipation | - | 160W |
| Case Connection | - | COLLECTOR |
| Transistor Application | - | POWER CONTROL |
| Rise Time | - | 22ns |
| Polarity/Channel Type | - | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | - | 2.5V |
| Max Collector Current | - | 40A |
| Collector Emitter Breakdown Voltage | - | 600V |
| Collector Emitter Saturation Voltage | - | 2.36V |
| Turn On Time | - | 48 ns |
| Turn Off Time-Nom (toff) | - | 294 ns |
| Gate-Emitter Voltage-Max | - | 20V |
| Gate-Emitter Thr Voltage-Max | - | 6V |
| Fall Time-Max (tf) | - | 110ns |
| Height | - | 9.652mm |
| Length | - | 10.668mm |
| Width | - | 4.826mm |
| REACH SVHC | - | No SVHC |
| Radiation Hardening | - | No |
| Lead Free | - | Lead Free |
| Submit RFQ: | Submit | Submit |
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