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Part Number: IRG4BC30WPBF vs IRG4BC40W-SPBF

Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! Infineon Technologies Infineon Technologies
Part Number IRG4BC30WPBF IRG4BC40W-SPBF
Manufacturer Infineon Technologies Infineon Technologies
Description IGBT 600V 23A 100W TO220AB IGBT 600V 40A 160W D2PAK
Quantity Available Available Available
Factory Lead Time 16 Weeks 8 Weeks
Mount Through Hole Surface Mount, Through Hole
Mounting Type Through Hole Surface Mount
Package / Case TO-220-3 TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins 3 3
Weight 6.000006g -
Transistor Element Material SILICON SILICON
Operating Temperature -55°C~150°C TJ -55°C~150°C TJ
Packaging Tube Tube
Published 2003 2004
Part Status Last Time Buy Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 3 2
Termination Through Hole -
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors Insulated Gate BIP Transistors
Voltage - Rated DC 600V 600V
Max Power Dissipation 100W 160W
Terminal Position SINGLE SINGLE
Current Rating 23A 40A
Number of Elements 1 1
Element Configuration Dual Dual
Power Dissipation 100W 160W
Case Connection COLLECTOR COLLECTOR
Input Type Standard Standard
Turn On Delay Time 25 ns 27 ns
Transistor Application POWER CONTROL POWER CONTROL
Rise Time 17ns 23ns
Polarity/Channel Type N-CHANNEL N-CHANNEL
Turn-Off Delay Time 99 ns 100 ns
Collector Emitter Voltage (VCEO) 2.7V 2.5V
Max Collector Current 23A 40A
JEDEC-95 Code TO-220AB -
Collector Emitter Breakdown Voltage 600V 600V
Collector Emitter Saturation Voltage 2.7V 2.05V
Turn On Time 41 ns 48 ns
Test Condition 480V, 12A, 23 Ω, 15V 480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 300 ns 294 ns
Gate Charge 51nC 98nC
Current - Collector Pulsed (Icm) 92A 160A
Td (on/off) @ 25°C 25ns/99ns 27ns/100ns
Switching Energy 130μJ (on), 130μJ (off) 110μJ (on), 230μJ (off)
Gate-Emitter Voltage-Max 20V 20V
Gate-Emitter Thr Voltage-Max 6V 6V
Fall Time-Max (tf) 100ns 110ns
Height 8.77mm 4.83mm
Length 10.54mm 10.668mm
Width 4.69mm 4.826mm
REACH SVHC No SVHC No SVHC
Radiation Hardening No No
RoHS Status ROHS3 Compliant ROHS3 Compliant
Lead Free Contains Lead, Lead Free Lead Free
JESD-609 Code - e3
Terminal Finish - Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form - GULL WING
Peak Reflow Temperature (Cel) - 260
Time@Peak Reflow Temperature-Max (s) - 30
JESD-30 Code - R-PSSO-G2
Submit RFQ: Submit Submit
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