| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number | CSD13380F3 | CSD16556Q5B |
| Manufacturer | Texas Instruments | Texas Instruments |
| Description | 12-V, N channel NexFET? power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection | 25-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm |
| Quantity Available | Available | Available |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | ACTIVE (Last Updated: 1 day ago) |
| Factory Lead Time | 6 Weeks | 6 Weeks |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 3-SMD, No Lead | 8-PowerTDFN |
| Surface Mount | YES | - |
| Number of Pins | 3 | 8 |
| Transistor Element Material | SILICON | SILICON |
| Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | FemtoFET™ | NexFET™ |
| Pbfree Code | yes | yes |
| Part Status | Active | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 3 | 5 |
| ECCN Code | EAR99 | EAR99 |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM | DUAL |
| Base Part Number | CSD13380 | CSD16556 |
| Number of Elements | 1 | 1 |
| Power Dissipation-Max | 500mW Ta | 3.2W Ta 191W Tc |
| Element Configuration | Single | Single |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| FET Type | N-Channel | N-Channel |
| Transistor Application | SWITCHING | SWITCHING |
| Rds On (Max) @ Id, Vgs | 76m Ω @ 400mA, 4.5V | 1.07m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 1.3V @ 250μA | 1.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 156pF @ 6V | 6180pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A Ta | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 1.2nC @ 4.5V | 47nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 12V | - |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V | 4.5V 10V |
| Vgs (Max) | 8V | ±20V |
| Drain Current-Max (Abs) (ID) | 2.1A | 40A |
| Drain-source On Resistance-Max | 0.092Ohm | - |
| DS Breakdown Voltage-Min | 12V | - |
| Feedback Cap-Max (Crss) | 12.5 pF | - |
| Length | 690μm | 5mm |
| Width | 600μm | 6mm |
| Thickness | 345μm | 950μm |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Mount | - | Surface Mount |
| JESD-609 Code | - | e3 |
| Terminal Finish | - | Matte Tin (Sn) |
| Additional Feature | - | AVALANCHE RATED |
| Subcategory | - | FET General Purpose Powers |
| Peak Reflow Temperature (Cel) | - | 260 |
| Power Dissipation | - | 3.2W |
| Case Connection | - | DRAIN |
| Turn On Delay Time | - | 17 ns |
| Rise Time | - | 34ns |
| Fall Time (Typ) | - | 13 ns |
| Turn-Off Delay Time | - | 25 ns |
| Continuous Drain Current (ID) | - | 100A |
| Threshold Voltage | - | 1.4V |
| Gate to Source Voltage (Vgs) | - | 20V |
| Drain to Source Breakdown Voltage | - | 25V |
| Pulsed Drain Current-Max (IDM) | - | 249A |
| Avalanche Energy Rating (Eas) | - | 530 mJ |
| REACH SVHC | - | No SVHC |
| Radiation Hardening | - | No |
| Lead Free | - | Contains Lead |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
|
CSD16570Q5B | Texas Instruments | 25-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 0.82 mOhm | Compare |
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CSD16570Q5BT | Texas Instruments | 25-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 0.82 mOhm | Compare |
