| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number | DMN53D0LW-13 | DMN1019UVT-13 |
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Description | MOSFET N-CH 50V SOT323 | MOSFET N-CH 12V 10.7A TSOT26 |
| Quantity Available | Available | Available |
| Factory Lead Time | 22 Weeks | 14 Weeks |
| Mount | Surface Mount | Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | SC-70, SOT-323 | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 3 | - |
| Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Published | 2013 | 2015 |
| JESD-609 Code | e3 | e3 |
| Part Status | Active | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| ECCN Code | EAR99 | EAR99 |
| Terminal Finish | Matte Tin (Sn) | Matte Tin (Sn) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 320mW Ta | 1.73W Ta |
| Turn On Delay Time | 2.7 ns | - |
| FET Type | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 2 Ω @ 270mA, 10V | 10m Ω @ 9.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 100μA | 800mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 45.8pF @ 25V | 2588pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 360mA Ta | 10.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 1.2nC @ 10V | 50.4nC @ 8V |
| Rise Time | 2.5ns | - |
| Drain to Source Voltage (Vdss) | 50V | 12V |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V | 1.2V 4.5V |
| Vgs (Max) | ±20V | ±8V |
| Fall Time (Typ) | 11 ns | - |
| Turn-Off Delay Time | 18.9 ns | - |
| Continuous Drain Current (ID) | 360mA | 10.7A |
| Gate to Source Voltage (Vgs) | 20V | - |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Transistor Element Material | - | SILICON |
| Number of Terminations | - | 6 |
| Terminal Position | - | DUAL |
| Terminal Form | - | GULL WING |
| Peak Reflow Temperature (Cel) | - | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | - | NOT SPECIFIED |
| JESD-30 Code | - | R-PDSO-G6 |
| Number of Elements | - | 1 |
| Configuration | - | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | - | ENHANCEMENT MODE |
| Transistor Application | - | SWITCHING |
| Drain-source On Resistance-Max | - | 0.01Ohm |
| Pulsed Drain Current-Max (IDM) | - | 70A |
| DS Breakdown Voltage-Min | - | 12V |
| Avalanche Energy Rating (Eas) | - | 4.7 mJ |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
|
DMN1016UCB6 | DIODES | Compare | |
|
DMN1019USN-7 | Diodes Incorporated | MOSFET N-CH 12V 9.3A SC59 | Compare |
|
DMN1019UVT-7 | Diodes Incorporated | MOSFET N-CH 12V 10.7A TSOT26 | Compare |
|
DMN1016UCB6-7 | Diodes Incorporated | MOSFET N-CH 12V 5.5A U-WLB1510-6 | Compare |
|
DMN1019UFDE-7 | Diodes Incorporated | MOSFET N CH 12V 11A U-DFN2020-6E | Compare |
