| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number | FDMC3020DC | FDMC8676 |
| Manufacturer | QQ2850920 | Fairchild/ON Semiconductor |
| Description | MOSFET N-CH 30V 16A POWER33 | |
| Quantity Available | Available | Available |
| Vgs(th) (Max) @ Id: | 3V @ 250µA | - |
| Vgs (Max): | ±20V | - |
| Technology: | MOSFET (Metal Oxide) | - |
| Supplier Device Package: | Dual Cool ™ 33 | - |
| Series: | Dual Cool™, PowerTrench® | - |
| Rds On (Max) @ Id, Vgs: | 6.25 mOhm @ 12A, 10V | - |
| Power Dissipation (Max): | 3W (Ta), 50W (Tc) | - |
| Packaging: | Tape & Reel (TR) | - |
| Package / Case: | 8-PowerTDFN | - |
| Other Names: | FDMC3020DC-ND FDMC3020DCTR |
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| Operating Temperature: | -55°C ~ 150°C (TJ) | - |
| Mounting Type: | Surface Mount | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) | - |
| Manufacturer Standard Lead Time: | 26 Weeks | - |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 1385pF @ 15V | - |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V | - |
| FET Type: | N-Channel | - |
| FET Feature: | - | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V | - |
| Drain to Source Voltage (Vdss): | 30V | - |
| Detailed Description: | N-Channel 30V 17A (Ta), 40A (Tc) 3W (Ta), 50W (Tc) Surface Mount Dual Cool ™ 33 | - |
| Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 40A (Tc) | - |
| Mounting Type | - | Surface Mount |
| Package / Case | - | 8-PowerTDFN |
| Surface Mount | - | YES |
| Transistor Element Material | - | SILICON |
| Operating Temperature | - | -55°C~150°C TJ |
| Packaging | - | Tape & Reel (TR) |
| Series | - | PowerTrench® |
| JESD-609 Code | - | e4 |
| Pbfree Code | - | yes |
| Part Status | - | Obsolete |
| Moisture Sensitivity Level (MSL) | - | 1 (Unlimited) |
| Number of Terminations | - | 5 |
| Terminal Finish | - | NICKEL PALLADIUM GOLD |
| Technology | - | MOSFET (Metal Oxide) |
| Terminal Position | - | DUAL |
| Terminal Form | - | NO LEAD |
| Peak Reflow Temperature (Cel) | - | 260 |
| Reach Compliance Code | - | unknown |
| Time@Peak Reflow Temperature-Max (s) | - | 30 |
| Pin Count | - | 8 |
| JESD-30 Code | - | R-PDSO-N5 |
| Qualification Status | - | COMMERCIAL |
| Number of Elements | - | 1 |
| Configuration | - | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | - | 2.3W Ta 41W Tc |
| Operating Mode | - | ENHANCEMENT MODE |
| Case Connection | - | DRAIN |
| FET Type | - | N-Channel |
| Transistor Application | - | SWITCHING |
| Rds On (Max) @ Id, Vgs | - | 5.9m Ω @ 14.7A, 10V |
| Vgs(th) (Max) @ Id | - | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | - | 1.935pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | - | 16A Ta 18A Tc |
| Gate Charge (Qg) (Max) @ Vgs | - | 30nC @ 10V |
| Drain to Source Voltage (Vdss) | - | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | - | 4.5V 10V |
| Vgs (Max) | - | ±20V |
| Drain Current-Max (Abs) (ID) | - | 16A |
| Drain-source On Resistance-Max | - | 0.0059Ohm |
| Pulsed Drain Current-Max (IDM) | - | 60A |
| DS Breakdown Voltage-Min | - | 30V |
| Avalanche Energy Rating (Eas) | - | 216 mJ |
| RoHS Status | - | ROHS3 Compliant |
| Submit RFQ: | Submit | Submit |
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