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Part Number: DMN2058U-7 vs DMN2050L-7

Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! DIODES Diodes Incorporated
Part Number DMN2058U-7 DMN2050L-7
Manufacturer DIODES Diodes Incorporated
Description MOSFETs N-Channel VDS=20V VGS=±12V ID=4.6A RDS(ON)=30mΩ@4.5V SOT23 MOSFET N-CH 20V 5.9A SOT23-3
Quantity Available Available Available
Continuous Drain Current 4.6A -
Drain Current 1µA -
Drain Source Voltage (Vdss) 20V -
Operating Temperature -55~+150℃ -55°C~150°C TJ
Breakdown voltage of grid and source ±12V -
Breakdown Voltage 20V -
Polarization N-Channel -
Partlife Cycle Active -
Storage Temperature -55~+150℃ -
Lead Quantity 3Pin -
Height 1.10mm 1mm
L x W/Size 2.90 x 1.30mm -
Country of Origin America -
Original Manufacturer Diodes Incorporated -
Brand DIODES -
Number Of Channels 1 -
Rdson (Maximum) For Different Ids And Vgs 30mΩ -
Lead Free Or Not Yes -
Part Status Active Active
Factory Lead Time - 16 Weeks
Mount - Surface Mount
Mounting Type - Surface Mount
Package / Case - TO-236-3, SC-59, SOT-23-3
Number of Pins - 3
Weight - 7.994566mg
Transistor Element Material - SILICON
Packaging - Tape & Reel (TR)
Published - 2008
JESD-609 Code - e3
Pbfree Code - yes
Moisture Sensitivity Level (MSL) - 1 (Unlimited)
Number of Terminations - 3
ECCN Code - EAR99
Resistance - 29MOhm
Terminal Finish - Matte Tin (Sn)
Additional Feature - HIGH RELIABILITY
Subcategory - FET General Purpose Powers
Technology - MOSFET (Metal Oxide)
Terminal Position - DUAL
Terminal Form - GULL WING
Peak Reflow Temperature (Cel) - 260
Time@Peak Reflow Temperature-Max (s) - 40
Pin Count - 3
Number of Elements - 1
Number of Channels - 1
Power Dissipation-Max - 1.4W Ta
Element Configuration - Single
Operating Mode - ENHANCEMENT MODE
Power Dissipation - 1.4W
FET Type - N-Channel
Transistor Application - SWITCHING
Rds On (Max) @ Id, Vgs - 29m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id - 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds - 532pF @ 10V
Current - Continuous Drain (Id) @ 25°C - 5.9A Ta
Gate Charge (Qg) (Max) @ Vgs - 6.7nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) - 2V 4.5V
Vgs (Max) - ±12V
Continuous Drain Current (ID) - 5.9A
Gate to Source Voltage (Vgs) - 12V
Drain to Source Breakdown Voltage - 20V
Length - 2.9mm
Width - 1.3mm
REACH SVHC - No SVHC
Radiation Hardening - No
RoHS Status - ROHS3 Compliant
Lead Free - Lead Free
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Related parts for DMN2050L-7
Image Part Number Manufacturer Description Compare
DMN2056U-7 DMN2056U-7 DIODES 20V 4A 940mW 38mΩ@4.5V,3.6A 1V@250uA N Channel SOT-23 MOSFETs ROHS Compare
DMN2058U-7 DMN2058U-7 DIODES MOSFETs N-Channel VDS=20V VGS=±12V ID=4.6A RDS(ON)=30mΩ@4.5V SOT23 Compare
DMN2050L-7-F DMN2050L-7-F DIODES Compare
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