Diodes Incorporated DMT6005LCT

Mfr.Part #:

DMT6005LCT

Manufacturer:

Description:
MOSFET NCH 60V 100A TO220AB

RoHS Status:

RoHS

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Specifications

Product Details

Product Comparison

Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type

Mounting Type refers to the method by which an electronic component is attached to a printed circuit board (PCB) or other surface. Common mounting types include: * Through-hole: Component leads are inserted into holes in the PCB and soldered on the other side. * Surface-mount: Component is placed on the surface of the PCB and soldered in place. * Press-fit: Component is pressed into place on the PCB without soldering. * Socket: Component is inserted into a socket on the PCB, allowing for easy replacement. The mounting type is determined by factors such as the component's size, shape, and power requirements.

Through Hole
Package / Case

Package / Case refers to the physical housing or enclosure that encapsulates an electronic component. It provides protection, facilitates handling, and enables electrical connections. The package type determines the component's size, shape, pin configuration, and mounting options. Common package types include DIP (dual in-line package), SOIC (small outline integrated circuit), and BGA (ball grid array). The package also influences the component's thermal and electrical performance.

TO-220-3
Transistor Element Material
SILICON
Operating Temperature

Operating Temperature is the range of temperatures at which an electronic component can function properly. It is typically specified in degrees Celsius (°C) and indicates the minimum and maximum temperatures at which the component can operate without experiencing damage or degradation. Operating Temperature is an important parameter to consider when designing electronic circuits, as it ensures that the components will function reliably in the intended operating environment.

-55°C~150°C TJ
Packaging
Tube
Series

Series, in the context of electronic components, refers to the arrangement of components in a circuit. When components are connected in series, they form a single path for current to flow through. The total resistance of a series circuit is the sum of the individual resistances of each component. Series connections are often used to control the flow of current in a circuit, as the total resistance can be adjusted by changing the number or type of components in the series.

Automotive, AEC-Q101
Published
2016
JESD-609 Code
e3
Part Status

Part Status is an electronic component parameter that indicates the availability and production status of a component. It is typically used to inform customers about the availability of a component, whether it is in production, end-of-life, or obsolete. Part Status can also provide information about any restrictions or limitations on the component's use, such as whether it is only available for certain applications or if it has been discontinued.

Active
Moisture Sensitivity Level (MSL)

Moisture Sensitivity Level (MSL) is a measure of the susceptibility of a surface mount electronic component to moisture-induced damage during soldering. It is classified into six levels, from 1 (least sensitive) to 6 (most sensitive). MSL is determined by the materials used in the component's construction, including the solderability of its terminals and the presence of moisture-absorbing materials. Components with higher MSL ratings require more stringent handling and storage conditions to prevent moisture absorption and subsequent damage during soldering.

1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Technology

Technology, in the context of electronic components, refers to the specific manufacturing process and materials used to create the component. It encompasses the semiconductor fabrication techniques, such as the type of transistor used (e.g., MOSFET, BJT), the gate oxide thickness, and the interconnect materials. Technology also includes the packaging type, such as surface mount or through-hole, and the leadframe or substrate material. The technology used impacts the component's performance characteristics, such as speed, power consumption, and reliability.

MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.3W Ta 104W Tc
Operating Mode
ENHANCEMENT MODE
FET Type

FET Type refers to the specific type of Field-Effect Transistor (FET) used in an electronic circuit. FETs are semiconductor devices that control the flow of current using an electric field.

N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2962pF @ 30V
Current - Continuous Drain (Id) @ 25°C
100A Tc
Gate Charge (Qg) (Max) @ Vgs
47.1nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
100A
JEDEC-95 Code
TO-220AB
Drain-source On Resistance-Max
0.006Ohm
Pulsed Drain Current-Max (IDM)
130A
DS Breakdown Voltage-Min
60V
Avalanche Energy Rating (Eas)
43.5 mJ
RoHS Status
ROHS3 Compliant
DMT6005LCT Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 43.5 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2962pF @ 30V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).Peak drain current is 130A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 60V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

DMT6005LCT Features
the avalanche energy rating (Eas) is 43.5 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 130A.
a 60V drain to source voltage (Vdss)


DMT6005LCT Applications
There are a lot of Diodes Incorporated
DMT6005LCT applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
DMT6005LCT More Descriptions
Trans MOSFET N-CH 60V 100A Automotive 3-Pin(3 Tab) TO-220 Tube
MOSFET BVDSS: 41V~60V TO220-3 TUBE 50PCS
60V N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Max Power Dissipation
    Terminal Form
    Case Connection
    Power - Max
    FET Technology
    FET Feature
    View Compare
  • DMT6005LCT
    DMT6005LCT
    20 Weeks
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -55°C~150°C TJ
    Tube
    Automotive, AEC-Q101
    2016
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    2.3W Ta 104W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    6m Ω @ 20A, 10V
    3V @ 250μA
    2962pF @ 30V
    100A Tc
    47.1nC @ 10V
    60V
    4.5V 10V
    ±20V
    100A
    TO-220AB
    0.006Ohm
    130A
    60V
    43.5 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
  • DMTH4005SCT
    24 Weeks
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -55°C~175°C TJ
    Tube
    Automotive, AEC-Q101
    2016
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    2.8W Ta 125W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    4.7m Ω @ 50A, 10V
    4V @ 250μA
    3062pF @ 20V
    100A Tc
    49.1nC @ 10V
    40V
    10V
    ±20V
    100A
    TO-220AB
    0.0047Ohm
    160A
    40V
    52.8 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
  • DMT3020LFDB-7
    23 Weeks
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101
    2016
    e4
    Active
    1 (Unlimited)
    6
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    -
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    S-PDSO-N6
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    -
    ENHANCEMENT MODE
    2 N-Channel (Dual)
    SWITCHING
    20m Ω @ 9A, 10V
    3V @ 250μA
    393pF @ 15V
    -
    7nC @ 10V
    30V
    -
    -
    7.7A
    -
    0.02Ohm
    -
    30V
    -
    ROHS3 Compliant
    700mW
    NO LEAD
    DRAIN
    700mW
    METAL-OXIDE SEMICONDUCTOR
    Standard

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