| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number | IRF6644 | IRF1010ZPBF |
| Manufacturer | Infineon Technologies | IR |
| Description | MOSFET N-CH 100V DIRECTFET-MN | |
| Quantity Available | Available | Available |
| Mounting Type | Surface Mount | Through Hole |
| Package / Case | DirectFET™ Isometric MN | TO-220-3 |
| Surface Mount | YES | - |
| Transistor Element Material | SILICON | SILICON |
| Operating Temperature | -40°C~150°C TJ | -55°C~175°C TJ |
| Packaging | Tube | Tube |
| Series | HEXFET® | HEXFET® |
| Published | 2005 | 2003 |
| JESD-609 Code | e4 | - |
| Part Status | Obsolete | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | 1 (Unlimited) |
| Number of Terminations | 3 | 3 |
| ECCN Code | EAR99 | EAR99 |
| Terminal Finish | Silver/Nickel (Ag/Ni) | - |
| HTS Code | 8541.29.00.95 | - |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM | - |
| Terminal Form | NO LEAD | - |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | - |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | - |
| JESD-30 Code | R-XBCC-N3 | - |
| Qualification Status | Not Qualified | - |
| Number of Elements | 1 | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE | - |
| Power Dissipation-Max | 2.8W Ta 89W Tc | 140W Tc |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Case Connection | DRAIN | DRAIN |
| FET Type | N-Channel | N-Channel |
| Transistor Application | SWITCHING | SWITCHING |
| Rds On (Max) @ Id, Vgs | 13m Ω @ 10.3A, 10V | 7.5m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 150μA | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2210pF @ 25V | 2840pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 10.3A Ta 60A Tc | 75A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V | 95nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V | - |
| Drive Voltage (Max Rds On,Min Rds On) | 10V | 10V |
| Vgs (Max) | ±20V | ±20V |
| Drain Current-Max (Abs) (ID) | 10.3A | - |
| Drain-source On Resistance-Max | 0.013Ohm | - |
| Pulsed Drain Current-Max (IDM) | 82A | - |
| DS Breakdown Voltage-Min | 100V | - |
| Avalanche Energy Rating (Eas) | 220 mJ | - |
| RoHS Status | Non-RoHS Compliant | ROHS3 Compliant |
| Factory Lead Time | - | 12 Weeks |
| Mount | - | Through Hole |
| Number of Pins | - | 3 |
| Resistance | - | 7.5MOhm |
| Additional Feature | - | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
| Subcategory | - | FET General Purpose Power |
| Voltage - Rated DC | - | 55V |
| Current Rating | - | 75A |
| Element Configuration | - | Single |
| Power Dissipation | - | 140W |
| Turn On Delay Time | - | 18 ns |
| Rise Time | - | 150ns |
| Fall Time (Typ) | - | 92 ns |
| Turn-Off Delay Time | - | 36 ns |
| Continuous Drain Current (ID) | - | 75A |
| JEDEC-95 Code | - | TO-220AB |
| Gate to Source Voltage (Vgs) | - | 20V |
| Drain to Source Breakdown Voltage | - | 55V |
| Dual Supply Voltage | - | 55V |
| Recovery Time | - | 33 ns |
| Nominal Vgs | - | 4 V |
| Height | - | 8.77mm |
| Length | - | 10.54mm |
| Width | - | 4.69mm |
| REACH SVHC | - | No SVHC |
| Radiation Hardening | - | No |
| Lead Free | - | Lead Free |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
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IRF1010ESTRPBF | VB | Compare | |
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IRF1018EPBF | IR | Compare | |
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IRF1010ZSTRLPBF | IR | Compare | |
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IRF1010Z | IR | Compare | |
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IRF1018ES | IR | Compare |
