| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number | IRF6644 | IRF1018EPBF |
| Manufacturer | Infineon Technologies | IR |
| Description | MOSFET N-CH 100V DIRECTFET-MN | |
| Quantity Available | Available | Available |
| Mounting Type | Surface Mount | - |
| Package / Case | DirectFET™ Isometric MN | - |
| Surface Mount | YES | - |
| Transistor Element Material | SILICON | - |
| Operating Temperature | -40°C~150°C TJ | - |
| Packaging | Tube | - |
| Series | HEXFET® | - |
| Published | 2005 | - |
| JESD-609 Code | e4 | - |
| Part Status | Obsolete | - |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | - |
| Number of Terminations | 3 | - |
| ECCN Code | EAR99 | - |
| Terminal Finish | Silver/Nickel (Ag/Ni) | - |
| HTS Code | 8541.29.00.95 | - |
| Technology | MOSFET (Metal Oxide) | - |
| Terminal Position | BOTTOM | - |
| Terminal Form | NO LEAD | - |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | - |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | - |
| JESD-30 Code | R-XBCC-N3 | - |
| Qualification Status | Not Qualified | - |
| Number of Elements | 1 | - |
| Configuration | SINGLE WITH BUILT-IN DIODE | - |
| Power Dissipation-Max | 2.8W Ta 89W Tc | - |
| Operating Mode | ENHANCEMENT MODE | - |
| Case Connection | DRAIN | - |
| FET Type | N-Channel | - |
| Transistor Application | SWITCHING | - |
| Rds On (Max) @ Id, Vgs | 13m Ω @ 10.3A, 10V | - |
| Vgs(th) (Max) @ Id | 4.8V @ 150μA | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2210pF @ 25V | - |
| Current - Continuous Drain (Id) @ 25°C | 10.3A Ta 60A Tc | - |
| Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V | - |
| Drain to Source Voltage (Vdss) | 100V | - |
| Drive Voltage (Max Rds On,Min Rds On) | 10V | - |
| Vgs (Max) | ±20V | - |
| Drain Current-Max (Abs) (ID) | 10.3A | - |
| Drain-source On Resistance-Max | 0.013Ohm | - |
| Pulsed Drain Current-Max (IDM) | 82A | - |
| DS Breakdown Voltage-Min | 100V | - |
| Avalanche Energy Rating (Eas) | 220 mJ | - |
| RoHS Status | Non-RoHS Compliant | - |
| Vgs(th) (Max) @ Id: | - | 4V @ 100µA |
| Vgs (Max): | - | ±20V |
| Technology: | - | MOSFET (Metal Oxide) |
| Supplier Device Package: | - | TO-220AB |
| Series: | - | HEXFET® |
| Rds On (Max) @ Id, Vgs: | - | 8.4 mOhm @ 47A, 10V |
| Power Dissipation (Max): | - | 110W (Tc) |
| Packaging: | - | Tube |
| Package / Case: | - | TO-220-3 |
| Other Names: | - | SP001574502 |
| Operating Temperature: | - | -55°C ~ 175°C (TJ) |
| Mounting Type: | - | Through Hole |
| Moisture Sensitivity Level (MSL): | - | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | - | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | - | 2290pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | - | 69nC @ 10V |
| FET Type: | - | N-Channel |
| FET Feature: | - | - |
| Drive Voltage (Max Rds On, Min Rds On): | - | 10V |
| Drain to Source Voltage (Vdss): | - | 60V |
| Detailed Description: | - | N-Channel 60V 79A (Tc) 110W (Tc) Through Hole TO-220AB |
| Current - Continuous Drain (Id) @ 25°C: | - | 79A (Tc) |
| Submit RFQ: | Submit | Submit |
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